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absolute maximum ratings (per die) parameter units i d @ v gs = 4.5v, t c = 25c continuous drain current 2.6 i d @ v gs = 4.5v, t c = 100c continuous drain current 1.6 i dm pulsed drain current 10.4 p d @ t c = 25c max. power dissipation 12 w linear derating factor 0.1 w/c v gs gate-to-source voltage 10 v e as single pulse avalanche energy 38.5 mj i ar avalanche current 2.6 a e ar repetitive avalanche energy 1.2 mj dv/dt peak diode recovery dv/dt 5.56 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 0.89 (typical) g c a www.irf.com 1 product summary part number radiation level r ds(on) i d IRHLQ77214 100k rads (si) 1.0 ? 2.6a irhlq73214 300k rads (si) 1.0 ? 2.6a for footnotes refer to the last page pre-irradiation radiation hardened IRHLQ77214 logic level power mosfet 250v, quad n-channel surface mount (lcc-28) lcc-28 features: 5v cmos and ttl compatible fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic package surface mount light weight international rectifier?s r7 tm logic level power mosfets provide simple solution to interfacing cmos and ttl control circuits to power devices in space and other radiation environments. the threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. this is achieved while maintaining single event gate rupture and single event burnout immunity. these devices are used in applications such as current boost low signal source in pwm, voltage comparator and operational amplifiers. technology 2n7615u6 pd-97260
IRHLQ77214, 2n7615u6 pre-irradiation 2 www.irf.com for footnotes refer to the last page source-drain diode ratings and characteristics (per die) parameter min typ max units test conditions i s continuous source current (body diode) ? ? 2.6 i sm pulse source current (body diode) ? ? 10.4 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 2.6a, v gs = 0v t rr reverse recovery time ? ? 371 ns t j = 25c, i f = 2.6a, di/dt 100a/ s q rr reverse recovery charge ? ? 858 nc v dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available international rectifier website. electrical characteristics @ tj = 25c (per die) (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 250 ? ? v v gs = 0v, i d = 250 a ? bv dss / ? t j temperature coefficient of breakdown ? 0.25 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 1.0 ? v gs = 4.5v, i d = 1.6a resistance v gs(th) gate threshold voltage 1.0 ? 2.0 v v ds = v gs , i d = 250 a ? v gs(th) / ? t j gate threshold voltage coefficient ? -5.3 ? mv/c g fs forward transconductance 3.0 ? ? s v ds = 10v, i ds = 1.6a i dss zero gate voltage drain current ? 1.0 v ds = 200v ,v gs = 0v ??10 v ds = 200v, v gs = 0v, t j =125c i gss gate-to-source leakage forward ? ? 100 v gs = 10v i gss gate-to-source leakage reverse ? ? -100 v gs = -10v q g total gate charge ? ? 18 v gs = 4.5v, i d = 2.6a q gs gate-to-source charge ? ? 3.0 nc v ds = 125v q gd gate-to-drain (?miller?) charge ? ? 12 t d (on) turn-on delay time ? ? 12 v dd = 125v, i d = 2.6a, t r rise time ? ? 40 v gs = 5.0v, r g = 7.5 ? t d (off) turn-off delay time ? ? 63 t f fall time ? ? 13 l s + l d total inductance ? 6.1 ? nh measured from the center of drain pad to center of source pad c iss input capacitance ? 605 ? v gs = 0v, v ds = 25v c oss output capacitance ? 62 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 0.7 ? na ns a r g gate resistance ? 6.7 ? f = 1.0mhz, open drain ? thermal resistance (per die) parameter min typ max units test conditions r thj-pcb junction-to-pcb ? ? 10.4 r thja junction-to-ambient ? ? 90
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www.irf.com 3 pre-irradiation IRHLQ77214, 2n7615u6 international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page fig a. typical single event effect, safe operating area table 1. electrical characteristics @ tj = 25c, post total dose irradiation (per die) parameter up to 300k rads (si) 1 units test conditions min max bv dss drain-to-source breakdown voltage 250 ? v v gs = 0v, i d = 250a v gs(th) gate threshold voltage 1.0 2.0 v gs = v ds , i d = 250a i gss gate-to-source leakage forward ? 100 na v gs = 10v i gss gate-to-source leakage reverse ? -100 v gs = -10v i dss zero gate voltage drain current ? 10 a v ds = 200v, v gs =0v r ds(on) static drain-to-source on-state resistance (to-3) ? 0.85 ? v gs = 4.5v, i d = 1.6a r ds(on) static drain-to-source on-state v sd diode forward voltage ? 1.2 v v gs = 0v, i d = 2.6a resistance (lcc-28) ? 1.0 ? v gs = 4.5v, i d = 1.6a 1. part numbers IRHLQ77214, irhlq73214 table 2. typical sin g le event effect safe operatin g area ion let energy range vds (v) (mev/(m g /cm 2 )) (mev) ( m) @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= 0v -1v -2v -3v -4v -5v -6v -7v kr 36.1 463 56 250 250 250 250 250 250 250 250 xe57.8 92473.2250250250----- au 88.2 1755 93.7 250 250 - - ---- 0 50 100 150 200 250 300 -7 -6 -5 -4 -3 -2 -1 0 vgs vds kr xe au
IRHLQ77214, 2n7615u6 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 1 1.5 2 2.5 3 3.5 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 50v 6 0 s pulse width t j = 150c t j = 25c 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width t j = 25c vgs top 10v 5.0v 4.5v 3.25v 2.75v 2.5v 2.25v bottom 2.0v 2.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 2.0v vgs top 10v 5.0v 4.5v 3.25v 2.75v 2.5v 2.25v bottom 2.0v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = 4.5v i d = 2.6a
www.irf.com 5 pre-irradiation IRHLQ77214, 2n7615u6 fig 7. typical drain-to-source breakdown voltage vs temperature fig 8. typical threshold voltage vs temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 150ma -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 240 260 280 300 320 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) i d = 1.0ma fig 5. typical on-resistance vs gate voltage fig 6. typical on-resistance vs drain current 2 4 6 8 10 12 v gs, gate -to -source voltage (v) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 2.6a t j = 25c t j = 150c 0 1 2 3 4 5 6 7 i d , drain current (a) 0.5 1 1.5 2 2.5 3 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) t j = 25c t j = 150c vgs = 4.5v
IRHLQ77214, 2n7615u6 pre-irradiation 6 www.irf.com 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 2 5 c fig 11. typical source-to-drain diode forward voltage 25 50 75 100 125 150 t c , case temperature (c) 0 0.5 1 1.5 2 2.5 3 i d , d r a i n c u r r e n t ( a ) fig 12. maximum drain current vs. case temperature fig 9. typical capacitance vs. drain-to-source voltage fig 10. typical gate charge vs. gate-to-source voltage 02468101214161820 q g, total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 200v v ds = 125v v ds = 50v i d = 2.6a for test circuit see figure 17 1 10 100 v ds , drain-to-source voltage (v) 0 200 400 600 800 1000 1200 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss
www.irf.com 7 pre-irradiation IRHLQ77214, 2n7615u6 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.2a 1.6a bottom 2.6a fig 14. maximum avalanche energy vs. drain current fig 15. maximum effective transient thermal impedance, junction-to-pcb fig 13. maximum safe operating area 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 1 00 s 1e-005 0.0001 0.001 0.01 0.1 1 10 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j - p c b ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc p t t dm 1 2
IRHLQ77214, 2n7615u6 pre-irradiation 8 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 17b. gate charge test circuit fig 17a. basic gate charge waveform v ds 90% 10% v gs t d(on) t r t d(off) t f fig 16a. unclamped inductive test circuit fig 16b. unclamped inductive waveforms t p v (br)dss i as fig 18a. switching time test circuit fig 18b. switching time waveforms r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs
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www.irf.com 9 pre-irradiation IRHLQ77214, 2n7615u6 pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 10 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 200 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l= 11.4mh peak i l = 2.6a, v gs = 10v i sd 2.6a, di/dt 399a/ s, v dd 250v, t j 150c footnotes: case outline and dimensions ? lcc-28 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 03/2008 q1 q2 q3 q4 q3 q4 q2 q1

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